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Single-Electron Memory Reaches a Room-Temperature Milestone
Key Takeaways
- Researchers reported a room-temperature memory device operating at the single-electron limit.
- The design uses an ultrathin graphene-based transistor to reduce stray capacitance.
- A measurable threshold-voltage shift indicates the addition or removal of a single electron.
- The result could inform future low-power, high-density memory research.
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DT Editorial Team··via phys.org