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Atomic Dipole Layers Unlock Next-Gen Ferroelectric Switching in AlScN
Key Takeaways
- Alternating atomic-dipole layers discovered in Al1-xScxN ferroelectrics.
- Enables sub-nanosecond switching with 30% lower coercive field.
- Lead-free, CMOS-compatible material suitable for nanoscale devices.
- Potential applications in FeFETs, FTJs, and neuromorphic computing.
DE
DT Editorial Team··via science.org